We present a monolithically integrated vertical coupled cavity surface-emitting laser diode which exhibits stable laser emission at two design wavelengths simultaneously. The device consists of two slightly asymmetric coupled vertical cavities containing strained InGaAs quantum wells as the gain media. The shorter cavity is pumped electrically. Lasing starts on the short wavelength mode at 927 nm. The laser emission then acts as an optical pump for the quantum wells in the longer cavity and provides additional gain for the long wavelength mode, resulting in a subsequent laser emission at 955 nm. With increasing injection current, the device maintains stable emission at the two wavelengths. The threshold for dual lasing is 4 kA/cm(2) and dual lasing is stable over six times the threshold. (C) 1999 American Institute of Physics. [S0003-6951(99)02932-0].