Near infrared absorption and room temperature photovoltaic response in AlN/GaN superlattices grown by metal-organic vapor-phase epitaxy
We report on intersubband absorption of near infrared radiation in AlN/GaN superlattice structures grown by metal-organic vapor-phase epitaxy. A good correlation between well thickness and absorption peak energy was obtained. One sample shows a photovoltaic signal which overlaps well with the corresponding absorption curve at around 1.5 mu m (830 meV), a common wavelength in optical fiber telecommunication systems. This photovoltaic signal is strongest at temperatures around 75 K and persists up to room temperature. The frequency response of this sample was measured with a modulated 1.5 mu m laser diode. The amplitude of the response was highest for a frequency of 36 kHz.
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Baumann, E., Giorgetta, F. R., Hofstetter, D., Golka, S., Schrenk, W., Strasser, G., Kirste, L., Nicolay, S., Feltin, E., Carlin, J. F., & Grandjean, N. (2006). Near infrared absorption and room temperature photovoltaic response in AlN/GaN superlattices grown by metal-organic vapor-phase epitaxy. Applied Physics Letters, 89(4), Article 1106. https://doi.org/10.1063/1.2234847
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WOS:000239376500006
2006
89
4
1106
REVIEWED
EPFL