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research article
Solar blind AlGaN photodetectors with a very high spectral selectivity
Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 x 10(4), and better than 5 x 10(4), measured between 280 and 320 nm, are achieved in Metal Semiconductor Metal detectors and Schottky diodes respectively. The whole detector process is fully compatible with low cost array fabrication.
Type
research article
Authors
Publication date
2006
Published in
Volume
33
Issue
1
Start page
5
End page
7
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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