High-Al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy

We report on the growth by molecular-beam epitaxy on 2 in. sapphire substrates of crack-free AlxGa1-xN/GaN distributed Bragg reflectors (DBRs) with high-Al composition (x=0.5). This is achieved by introducing a thick AlN interlayer and strain mediating AlyGa1-yN layer between the substrate and DBR. The relatively larger refractive index ratio between Al0.5Ga0.5N and GaN permits one to obtain a quite large spectral stopband width (49 nm) and a high reflectance value (69%) for only eight mirror periods. (C) 2003 American Institute of Physics.


Published in:
Applied Physics Letters, 82, 4, 499-501
Year:
2003
ISSN:
0003-6951
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)