Exciton oscillator strength in GaN/AlGaN quantum wells

We have found experimentally that the exciton oscillator strength decreases dramatically with increase of the QW width in a GaN/Al0.07Ga0.93N system. The collapse of the oscillator strength is a manifestation of the polarisation field effect, as confirmed by our variational calculation. We find that only excitons in very thin quantum wells have an oscillator strength exceeding that of the exciton in bulk GaN.


Published in:
Physica Status Solidi a-Applications and Materials Science, 190, 1, 129-133
Year:
2002
ISSN:
0031-8965
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-09-13


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