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research article
Exciton oscillator strength in GaN/AlGaN quantum wells
We have found experimentally that the exciton oscillator strength decreases dramatically with increase of the QW width in a GaN/Al0.07Ga0.93N system. The collapse of the oscillator strength is a manifestation of the polarisation field effect, as confirmed by our variational calculation. We find that only excitons in very thin quantum wells have an oscillator strength exceeding that of the exciton in bulk GaN.
Type
research article
Authors
Publication date
2002
Volume
190
Issue
1
Start page
129
End page
133
Subjects
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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