Loading...
research article
Structural defects and relation with optoelectronic properties in highly Mg-doped GaN
A transmission electron microscopy of pyramidal inversion domains induced by Mg doping in MOVPE and bulk GaN is presented. Based on high resolution observations and EDX analysis, two atomic models are proposed for the Mg-rich (0001) inversion domain boundaries. These structural defects appearing for Mg concentrations in the 10(19) cm(-3) range are shown to be possible origins for the auto-compensation and the blue luminescence.
Type
research article
Authors
Leroux, M.
•
Vennegues, P.
•
Dalmasso, S.
•
Benaissa, M.
•
Feltin, E.
•
De Mierry, P.
•
Beaumont, B.
•
Damilano, B.
•
•
Gibart, P.
Publication date
2002
Published in
Volume
192
Issue
2
Start page
394
End page
400
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
Use this identifier to reference this record