Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures

We have measured the temperature dependence of the mobility of the two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN substrates. The linear dependence of the inverse mobility on temperature at temperatures below 50 K indicates the importance of acoustic phonon scattering in these high mobility heterostructures. Using the temperature dependence of the mobility at a range of carrier densities, we determined the GaN conduction band deformation potential to be a(c)=9.1+/-0.7 eV. This result provides a crucial parameter for accurate calculations of intrinsic mobility limits in AlGaN/GaN heterostructures. (C) 2002 American Institute of Physics.


Published in:
Applied Physics Letters, 80, 7, 1228-1230
Year:
2002
ISSN:
0003-6951
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-09-13


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