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research article
Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation
Solar blind metal-semiconductor-metal detectors have been fabricated based on AlGaN grown on Si by molecular-beam epitaxy. Submicron finger spacings were obtained by electron-beam lithography, and allowed us to demonstrate a significant improvement of the responsivity and the spectral selectivity. These results were explained by numerical two-dimensional calculations of the electric-field distribution. The simulation also explained the dependence of the response on applied bias. (C) 2002 American Institute of Physics.
Type
research article
Authors
Publication date
2002
Published in
Volume
92
Issue
9
Start page
5602
End page
5604
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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