Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation

Solar blind metal-semiconductor-metal detectors have been fabricated based on AlGaN grown on Si by molecular-beam epitaxy. Submicron finger spacings were obtained by electron-beam lithography, and allowed us to demonstrate a significant improvement of the responsivity and the spectral selectivity. These results were explained by numerical two-dimensional calculations of the electric-field distribution. The simulation also explained the dependence of the response on applied bias. (C) 2002 American Institute of Physics.


Published in:
Journal of Applied Physics, 92, 9, 5602-5604
Year:
2002
ISSN:
0021-8979
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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