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research article
Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy
We have grown GaN films and GaN-AlGaN quantum wells (QWs) on homoepitaxial substrates, by molecular beam epitaxy using ammonia. Both the GaN film and the QW are found to have superior excitonic recombination properties which are extremely promising for the development of indium free ultra-violet lasers based on nitrides. (C) 2001 Published by Elsevier Science Ltd.
Type
research article
Authors
Taliercio, T.
•
Gallart, M.
•
Lefebvre, P.
•
Morel, A.
•
Gil, B.
•
Allegre, J.
•
•
Massies, J.
•
Grzegory, I.
•
Porowski, S.
Publication date
2001
Published in
Volume
117
Issue
7
Start page
445
End page
448
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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