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research article
Fabrication of GaN photonic crystals for 400 nm wavelength
We report on results of the fabrication and the micro-reflectance measurement of GaN photonic crystals. The etching performance of GaN has been studied with a conventional reactive ion etching system and SiCl4 plasma. We obtained an etch rate of 100 nm/min and etching depth of 600 nm for dense GaN pillars. With graphite lattice of 270 run period we observed a high reflection peak in the region of 400 nm wavelengths, depending strongly on the incident light polarization, which is in a good agreement with the theoretical calculation. (C) 2001 Elsevier Science B.V. All rights reserved.
Type
research article
Authors
Peyrade, D.
•
Chen, Y.
•
Manin-Ferlazzo, L.
•
Lebib, A.
•
•
Coquillat, D.
•
Legros, R.
•
Lascaray, J. P.
Publication date
2001
Published in
Volume
57-8
Start page
843
End page
849
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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