Large built-in electric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

Influence of hydrostatic pressure on the light emission from strained GaN/AlGaN multi-quantum-well systems has been studied, Pressure coefficients of the photoluminescence peak energies show a strong reduction with respect to that of the GaN energy ? ap and this reduction is a function of the quantum-well thickness. The decrease of the light emission pressure coefficient may be almost 40% for a 32 monolayer (8 nm) thick quantum well in comparison with a 4 monolayer well. We explain this effect by a hydrostatic-pressure-induced increase of the piezoelectric field in the GaN/AlGaN quantum structures.


Published in:
Physica Status Solidi a-Applied Research, 188, 2, 839-843
Year:
2001
ISSN:
0031-8965
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)