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research article
Dielectric microcavity in GaN/Si
We have demonstrated an original approach for fabricating microcavities in GaN grown on Si. Holes are etched in the Si substrate and highly reflective dielectric mirrors are deposited on both front and back sides. The cavity has been optically characterized and the results validate our approach.
Type
research article
Authors
Publication date
2001
Published in
Volume
183
Issue
1
Start page
35
End page
39
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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