Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN
Bell, A.; Harrison, I.; Korakakis, D.; Larkins, E. C.; Hayes, J. M.; Kuball, M.; Grandjean, N.; Massies, J.
2001

Abstract

Photoluminescence (PL) spectroscopy has been used to investigate the effect that annealing temperature and ambient has on annealed molecular beam epitaxy grown GaN. Significant differences induced by the different annealing conditions occur in the PL spectra in the 3.424 eV region as well as the deep level band (2.0-3.0 eV). Power resolved measurements indicate that the 3.424 eV emission is a donor-acceptor pair transition. In the deep level region peaks are observed in all spectra at 2.3 and 2.6 eV. This suggests that the 2.3 and 2.6 eV peaks are related and a model is proposed to explain this luminescence. (C) 2001 American Institute of Physics.

Details

Title Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN
Author(s) Bell, A. ; Harrison, I. ; Korakakis, D. ; Larkins, E. C. ; Hayes, J. M. ; Kuball, M. ; Grandjean, N. ; Massies, J.
Published in Journal of Applied Physics
Volume 89
Issue 2
Pages 1070-1074
Date 2001
ISSN 0021-8979
Keywords
DOI https://doi.org/10.1063/1.1327288
Laboratories LASPE
Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Record creation date 2010-10-05

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