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research article

Potentialities of GaN-based microcavities grown on silicon substrates

Antoine-Vincent, N.
•
Natali, F.
•
Semond, F.
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2001
Physica Status Solidi a-Applied Research

A bulk GaN half-wave (lambda /2) cavity is grown on Si(Ill) substrate by molecular beam epitaxy. It is embedded between twelve AlN/(Al,Ga)N quaterwave stacks and the silicon substrate, which acts as a metallic bottom mirror in the investigated wavelength range. A (4 lambda - lambda /4) buffer layer has been inserted just above the silicon substrate in order to accommodate the strain, experienced by the GaN layer. and to satisfy the resonance condition of the cavity. Reflectivity experiments at low temperature (T = 5 K) reveal a cavity mode centered around 355 nm with a spectral width of 3.6 nm. The modeling of the reflectivity spectrum accounts well for the experiment. By recording both the photoluminescence and reflectivity signals at the same position, it is shown that the emission is controlled by the cavity mode. The splitting due to strong exciton-photon coupling is not observed, which could be clue to the large spectral width of GaN emission.

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Type
research article
DOI
10.1002/1521-396X(200112)188:2<519::AID-PSSA519>3.0.CO;2-7
Author(s)
Antoine-Vincent, N.
Natali, F.
Semond, F.
Leroux, M.
Grandjean, N.  
Massies, J.
Leymarie, J.
Vasson, A.
Date Issued

2001

Published in
Physica Status Solidi a-Applied Research
Volume

188

Issue

2

Start page

519

End page

522

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
LASPE  
Available on Infoscience
October 5, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/54926
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