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research article

Impact ionization of excitons in an electric field in GaN

Nelson, D. K.
•
Jacobson, M. A.
•
Kagan, V. D.
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1999
Physica Status Solidi B-Basic Solid State Physics

Quenching of the exciton luminescence of GaN epitaxial films and GaN/AlGaN quantum wells in an electric field is observed and attributed to impact ionization of excitonic states by hot electrons. It is found that impurity scattering rules the momentum relaxation of electrons rather than the acoustic phonon scattering. The effective mean free path of hot electrons l(eff) is estimated. The value of l(eff) for quantum wells appears to be one order of magnitude larger than that for epitaxial films.

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Type
research article
DOI
10.1002/(SICI)1521-3951(199911)216:1<63::AID-PSSB63>3.0.CO;2-8
Author(s)
Nelson, D. K.
Jacobson, M. A.
Kagan, V. D.
Shmidt, M.
Gil, B.
Grandjean, N.  
Massies, J.
Date Issued

1999

Published in
Physica Status Solidi B-Basic Solid State Physics
Volume

216

Issue

1

Start page

63

End page

67

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
LASPE  
Available on Infoscience
October 5, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/54895
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