Loading...
research article
GaInN GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy
GaInN and GaN were grown by molecular beam epitaxy on c-plane sapphire using NH3. 9 K photoluminescence performed on both GaInN thin layers and GaInN/GaN multiple-quantum wells (MQWs) exhibits narrow emission (similar to 50 meV linewidths). Transmission electron microscopy images show sharp GaInN/GaN interfaces and homogeneous GaInN layers. Strong indium surface segregation is also evidenced. Light-emitting diodes were fabricated from 5 x GaInN (25 Angstrom)/GaN (35 Angstrom) MQW heterostructures. The 300 K electroluminescence yields blue light at 440 nm. (c) 1999 American Institute of Physics. [S0003-6951(99)04124-8].
Type
research article
Authors
Publication date
1999
Published in
Volume
74
Issue
24
Start page
3616
End page
3618
Subjects
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
Use this identifier to reference this record