GaN/GaInN-based light emitting diodes grown by molecular beam epitaxy using NH3
1999
Abstract
III-V nitrides LEDs were grown on c-plane sapphire substrates by molecular beam epitaxy using NH, as nitrogen precursor and solid sources for group-III elements. LEDs based on GaInN/GaN multiple quantum well structures were fabricated. Their electroluminescence at room temperature is located at 470 nm and the line width is 45 nm at 20 mA. (C) 1999 Elsevier Science B.V. All rights reserved.
Details
Title
GaN/GaInN-based light emitting diodes grown by molecular beam epitaxy using NH3
Author(s)
Grandjean, N. ; Massies, J.
Published in
Journal of Crystal Growth
Volume
201
Pages
323-326
Date
1999
ISSN
0022-0248
Laboratories
LASPE
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Record creation date
2010-10-05