GaN/GaInN-based light emitting diodes grown by molecular beam epitaxy using NH3

III-V nitrides LEDs were grown on c-plane sapphire substrates by molecular beam epitaxy using NH, as nitrogen precursor and solid sources for group-III elements. LEDs based on GaInN/GaN multiple quantum well structures were fabricated. Their electroluminescence at room temperature is located at 470 nm and the line width is 45 nm at 20 mA. (C) 1999 Elsevier Science B.V. All rights reserved.


Published in:
Journal of Crystal Growth, 201, 323-326
Year:
1999
ISSN:
0022-0248
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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