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research article
Photoluminescence energy and interface chemistry of GaInP/GaAs quantum wells
It is shown that the unusual scattering of the currently reported photoluminescence energy of GaInP/GaAs quantum wells (QWs) can be well accounted for by considering the combined effect of In surface segregation and As/P exchange at the interfaces. The resulting chemical modification of the interfaces being strongly growth procedure dependent, can explain the observed dispersion of the experimental results. This is demonstrated by experiments in which different growth switching procedures are used at the GaInP/GaAs QW interfaces. (C) 1997 American Institute of Physics. [S0003-6951(97)03450-5].
Type
research article
Authors
Publication date
1997
Published in
Volume
71
Issue
24
Start page
3552
End page
3554
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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