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  4. Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells
 
research article

Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells

Disseix, P.
•
Leymarie, J.
•
Vasson, A.
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1997
Physical Review B

Indium segregation in InxGa1-xAs/GaAs (0.3

  • Details
  • Metrics
Type
research article
DOI
10.1103/PhysRevB.55.2406
Author(s)
Disseix, P.
Leymarie, J.
Vasson, A.
Vasson, A. M.
Monier, C.
Grandjean, N.  
Leroux, M.
Massies, J.
Date Issued

1997

Published in
Physical Review B
Volume

55

Issue

4

Start page

2406

End page

2412

Subjects

HIGHLY STRAINED INXGA1-XAS

•

SURFACE SEGREGATION

•

MONOLAYER-SCALE

•

HETEROSTRUCTURES

•

SPECTROSCOPY

•

GAAS

•

PHOTOLUMINESCENCE

•

LAYERS

•

ABSORPTION

•

LASERS

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
LASPE  
Available on Infoscience
October 5, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/54839
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