Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells
Disseix, P.; Leymarie, J.; Vasson, A.; Vasson, A. M.; Monier, C.; Grandjean, N.; Leroux, M.; Massies, J.
1997

Abstract

Indium segregation in InxGa1-xAs/GaAs (0.3

Details

Title Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells
Author(s) Disseix, P. ; Leymarie, J. ; Vasson, A. ; Vasson, A. M. ; Monier, C. ; Grandjean, N. ; Leroux, M. ; Massies, J.
Published in Physical Review B
Volume 55
Issue 4
Pages 2406-2412
Date 1997
ISSN 0163-1829
Keywords
DOI 10.1103/PhysRevB.55.2406
Laboratories LASPE
Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
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