Real-time investigation of In surface segregation in chemical beam epitaxy of In0.5Ga0.5P on GaAs (001)
1996
Abstract
Surface segregation processes during the growth of Ga0.5In0.5P/GaAs heterostructures by chemical beam epitaxy have been investigated in real time using reflection high-energy electron diffraction (RHEED). It is shown that In segregation occurs at both GaInP on GaAs and GaAs on GaInP interfaces. Resulting composition profiles are deduced from the RHEED data. (C) 1996 American Institute of Physics.
Details
Title
Real-time investigation of In surface segregation in chemical beam epitaxy of In0.5Ga0.5P on GaAs (001)
Author(s)
Mesrine, M. ; Massies, J. ; Deparis, C. ; Grandjean, N. ; Vanelle, E.
Published in
Applied Physics Letters
Volume
68
Issue
25
Pages
3579-3581
Date
1996
ISSN
0003-6951
Keywords
Laboratories
LASPE
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Record creation date
2010-10-05