Real-time investigation of In surface segregation in chemical beam epitaxy of In0.5Ga0.5P on GaAs (001)

• Published in: Applied Physics Letters (ISSN: 0003-6951), vol. 68, num. 25, p. 3579-3581
• Publication date: 1996

Surface segregation processes during the growth of Ga0.5In0.5P/GaAs heterostructures by chemical beam epitaxy have been investigated in real time using reflection high-energy electron diffraction (RHEED). It is shown that In segregation occurs at both GaInP on GaAs and GaAs on GaInP interfaces. Resulting composition profiles are deduced from the RHEED data. (C) 1996 American Institute of Physics.

Keywords: PHOTOELECTRON-SPECTROSCOPY ; TEMPERATURE ; HETEROSTRUCTURES ; ALXGA1-XAS ; INTERFACES ; LAYERS ; RHEED ; BULK

Reference

• EPFL-ARTICLE-152601
• doi:10.1063/1.116643

Record created on 2010-10-05, modified on 2017-05-12