Real-time investigation of In surface segregation in chemical beam epitaxy of In0.5Ga0.5P on GaAs (001)
Mesrine, M.; Massies, J.; Deparis, C.; Grandjean, N.; Vanelle, E.
1996

Abstract

Surface segregation processes during the growth of Ga0.5In0.5P/GaAs heterostructures by chemical beam epitaxy have been investigated in real time using reflection high-energy electron diffraction (RHEED). It is shown that In segregation occurs at both GaInP on GaAs and GaAs on GaInP interfaces. Resulting composition profiles are deduced from the RHEED data. (C) 1996 American Institute of Physics.

Details

Title Real-time investigation of In surface segregation in chemical beam epitaxy of In0.5Ga0.5P on GaAs (001)
Author(s) Mesrine, M. ; Massies, J. ; Deparis, C. ; Grandjean, N. ; Vanelle, E.
Published in Applied Physics Letters
Volume 68
Issue 25
Pages 3579-3581
Date 1996
ISSN 0003-6951
Keywords
DOI 10.1063/1.116643
Laboratories LASPE
Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
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