Abstract

Surface segregation processes during the growth of Ga0.5In0.5P/GaAs heterostructures by chemical beam epitaxy have been investigated in real time using reflection high-energy electron diffraction (RHEED). It is shown that In segregation occurs at both GaInP on GaAs and GaAs on GaInP interfaces. Resulting composition profiles are deduced from the RHEED data. (C) 1996 American Institute of Physics.

Details

Actions