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research article
Rutherford backscattering spectrometry, particle induced X-ray emission and atomic force microscopy of InAs thin films grown on GaAs: A complementary study
1996
The purpose of this work is to compare for thin film analysis, atomic force microscopy, a recently emerging tool, with well-established nuclear analysis techniques. The comparison is conducted using typical samples of InAs/GaAs heterostructures grown by molecular beam epitaxy under standard conditions as well as samples grown with Te as surfactant. After a brief overview of the different techniques, the obtained results are discussed with an emphasis on the limits and the complementarity of these techniques.
Type
research article
Authors
Publication date
1996
Published in
Volume
278
Issue
1-2
Start page
155
End page
165
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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