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research article
SURFACTANT-MEDIATED MOLECULAR-BEAM EPITAXY OF III-V STRAINED-LAYER HETEROSTRUCTURES
In this review we first present the two classes of non-reactive and reactive surfactants effective during homoepitaxy and heteroepitaxy, respectively. We then describe and analyse the results obtained by ''true'' surfactant-mediated molecular-beam epitaxy (SM-MBE) of Ga1-xInxAs layers on GaAs substrates. Then, the data obtained by using In as a ''virtual'' surfactant during SM-MBE of InAs layers on AlxGa0.48-x In0.52As/InP and GaAs substrates are presented. We finally provide evidence that the growth mode influences the resulting defect microstructure in (partially) relaxed layers.
Type
research article
Authors
Publication date
1995
Published in
Volume
150
Issue
1-4
Start page
460
End page
466
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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