IMPROVED GAINAS GAAS HETEROSTRUCTURES BY HIGH GROWTH-RATE MOLECULAR-BEAM EPITAXY

This work shows that the critical thickness for the two-dimensional-three-dimensional growth mode transition during the growth of Ga0.65In0.35As on GaAs(001) can be significantly increased by increasing the growth rate. This experimental finding is corroborated by a Monte Carlo simulation of this heteroepitaxial growth. Improved quantum well optical properties are demonstrated.


Published in:
Applied Physics Letters, 64, 20, 2664-2666
Year:
1994
ISSN:
0003-6951
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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