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research article
MONOLAYER THICKNESS CONTROL OF INXGA1-XAS/GAAS QUANTUM-WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
High strained InxGa1-xAs/GaAs quantum well (QW) structures have been grown by metalorganic molecular beam epitaxy (MOMBE) with the aim of investigating the capability of this epitaxial growth method in terms of thickness control. Emission lines from QWs with thicknesses differing by 1 monolayer (ML) are well resolved by low temperature photoluminescence. It is thus demonstrated that MOMBE allows a thickness control with 1 ML precision.
Type
research article
Authors
Courboules, B.
•
Massies, J.
•
Deparis, C.
•
•
Leymarie, J.
•
Monier, C.
•
Vasson, A. M.
•
Vasson, A.
Publication date
1994
Published in
Volume
64
Issue
12
Start page
1523
End page
1525
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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