MONOLAYER THICKNESS CONTROL OF INXGA1-XAS/GAAS QUANTUM-WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

High strained InxGa1-xAs/GaAs quantum well (QW) structures have been grown by metalorganic molecular beam epitaxy (MOMBE) with the aim of investigating the capability of this epitaxial growth method in terms of thickness control. Emission lines from QWs with thicknesses differing by 1 monolayer (ML) are well resolved by low temperature photoluminescence. It is thus demonstrated that MOMBE allows a thickness control with 1 ML precision.


Published in:
Applied Physics Letters, 64, 12, 1523-1525
Year:
1994
ISSN:
0003-6951
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-12-03


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