MONOLAYER THICKNESS CONTROL OF INXGA1-XAS/GAAS QUANTUM-WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
High strained InxGa1-xAs/GaAs quantum well (QW) structures have been grown by metalorganic molecular beam epitaxy (MOMBE) with the aim of investigating the capability of this epitaxial growth method in terms of thickness control. Emission lines from QWs with thicknesses differing by 1 monolayer (ML) are well resolved by low temperature photoluminescence. It is thus demonstrated that MOMBE allows a thickness control with 1 ML precision.
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Courboules, B., Massies, J., Deparis, C., Grandjean, N., Leymarie, J., Monier, C., Vasson, A. M., & Vasson, A. (1994). MONOLAYER THICKNESS CONTROL OF INXGA1-XAS/GAAS QUANTUM-WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY. Applied Physics Letters, 64(12), 1523–1525. https://doi.org/10.1063/1.111879
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1994
64
12
1523
1525
REVIEWED
OTHER