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research article
ELASTIC MISFIT STRESS-RELAXATION IN HIGHLY STRAINED INGAAS/GAAS STRUCTURES
The strain contrasts associated with three-dimensional coherently strained islands formed during the epitaxial growth of highly strained In0.45Ga0.55As layers on GaAs (001) have been studied by transmission electron-microscopy. It is demonstrated that the comparison of these experimental strain contrasts with simulated profiles makes it possible to assess the elastic relaxation of the islands.
Type
research article
Authors
Publication date
1994
Published in
Volume
65
Issue
9
Start page
1162
End page
1164
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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