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research article
OSCILLATION OF THE LATTICE-RELAXATION IN LAYER-BY-LAYER EPITAXIAL-GROWTH OF HIGHLY STRAINED MATERIALS
It is shown that during the growth of InxGa1-xAs on GaAs, the strain-induced lattice distortion oscillates as a function of monolayer completion in both purely 2D and quasi-2D layer-by-layer growth regimes. This is explained by considering that nontetragonal elastic distortion occurs at the free edges of 2D monolayer islands. Numerical relaxation using a simplified model of interatomic forces gives the correct order of magnitude of the strain relaxation by this process.
Type
research article
Authors
Publication date
1993
Published in
Volume
71
Issue
9
Start page
1411
End page
1414
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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