OSCILLATION OF THE LATTICE-RELAXATION IN LAYER-BY-LAYER EPITAXIAL-GROWTH OF HIGHLY STRAINED MATERIALS

It is shown that during the growth of InxGa1-xAs on GaAs, the strain-induced lattice distortion oscillates as a function of monolayer completion in both purely 2D and quasi-2D layer-by-layer growth regimes. This is explained by considering that nontetragonal elastic distortion occurs at the free edges of 2D monolayer islands. Numerical relaxation using a simplified model of interatomic forces gives the correct order of magnitude of the strain relaxation by this process.


Published in:
Physical Review Letters, 71, 9, 1411-1414
Year:
1993
ISSN:
0031-9007
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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