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research article
IMPROVEMENT OF THE GROWTH OF INXGA1-XAS ON GAAS (001) USING TE AS SURFACTANT
It is demonstrated by using reflection high-energy electron diffraction and transmission electron microscopy that the epitaxial growth of highly strained InxGa1-xAs (x>0.3) layers on GaAs(001) is improved by a preadsorbed Te surfactant layer. The formation of 3D islands is inhibited by the surfactant action and consequently the onset of plastic relaxation (i.e., the critical thickness) is significantly delayed.
Type
research article
Authors
Publication date
1993
Published in
Volume
63
Issue
1
Start page
66
End page
68
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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