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research article
CONFINED ELECTRON-STATES IN ULTRATHIN ALAS SINGLE QUANTUM-WELLS UNDER PRESSURE
1992
The low-temperature direct and indirect optical transitions in double-barrier Al0.3Ga0.7As/AlAs/GaAs single quantum wells, with AlAs widths of 0, 1, and 2 monolayers, have been studied as a function of pressure. It is shown that intense type-II recombinations occur under pressure in AlAs-bordered wells, due to X electron localization in the wells formed by the ultrathin AlAs layers. A fairly accurate description of the luminescence line energies and relative intensities is obtained over the whole pressure range investigated, with use of the envelope-function formalism.
Type
research article
Authors
Publication date
1992
Published in
Volume
45
Issue
20
Start page
11846
End page
11853
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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