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research article
DELAYED RELAXATION BY SURFACTANT ACTION IN HIGHLY STRAINED III-V SEMICONDUCTOR EPITAXIAL LAYERS
It is demonstrated that the concept of surfactant applies to the epitaxial growth of highly strained III-V semiconductors. The pseudomorphic growth regime of InAs on GaAs(001) is extended from 1.5 to 6 monolayers by the use of Te as surfactant. This delayed plastic relaxation of the strain is correlated with the modification of the growth mode via surface energy minimization.
Type
research article
Authors
Publication date
1992
Published in
Volume
69
Issue
5
Start page
796
End page
799
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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