Loading...
research article
Impact of Lateral Asymmetry of MOSFETs on the Gate and Drain Noise Correlation
Recent studies of Lim <i>et</i> <i>al.</i> have shown that channel engineering can effectively be used to globally improve the device noise performance. This happens because the doping profile can strongly impact the correlation between the drain and induced gate noise. In this brief, we will use the theory developed in the recent works of Roy <i>et</i> <i>al.</i> to provide a physical understanding and insight on the behavior of the gate-drain correlation coefficient, which will be very useful for understanding the mechanism by which the doping profile impacts the RF noise performance of a MOSFET.
Type
research article
Web of Science ID
WOS:000257950300066
Scopus ID
2-s2.0-49249099122
Authors
Publication date
2008
Published in
Volume
55
Issue
8
Start page
2268
End page
2272
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
June 24, 2010
Use this identifier to reference this record