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conference paper
Partitioning Schemes in the Lateral Asymmetric MOST
2006
2006 European Solid-State Device Research Conference
Lateral asymmetric MOSFET, which has longitudinal doping variation in the channel, is the core of high voltage MOSFET. Recently it has been recognized that capacitance property of this kind of device is fundamentally different from conventional MOST because Ward-Dutton (WD) charge partitioning is not applicable to this kind of devices (Aarts, 2006). In this work we show the existence of a partitioning scheme for small-signal operation of the device. We also provide physical explanations of unusual behavior of C dg in lateral asymmetric MOST. The proposed theory is validated by extensive numerical and device simulation.
Type
conference paper
Authors
Publication date
2006
Published in
2006 European Solid-State Device Research Conference
Start page
307
End page
310
Peer reviewed
REVIEWED
Available on Infoscience
June 24, 2010
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