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research article
A Compact Non-Quasi-Static Extension of a Charge-Based MOS Model
This paper presents a new and simple compact model for the intrinsic metal oxide semiconductor (MOS) transistor, which accurately takes into account the non quasistatic (NQS) effects. This is done without any additional assumption or simplification than those required in the derivation of the classical description of the MOS channel charge. Moreover, the model is valid from weak to strong inversion and nonsaturation to saturation. The theoretical results are in very good agreement with measured data performed on devices of various channel length, from 300 μm down to 0.5 μm, and in various modes of operation.
Type
research article
Scopus ID
2-s2.0-0035424932
Authors
Publication date
2001
Published in
Volume
48
Issue
8
Start page
1647
End page
1654
Subjects
Peer reviewed
REVIEWED
Available on Infoscience
June 24, 2010
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