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conference paper
MOS Transistor Modeling for RF IC Design
2000
Proc.of the Gallium Arsenide and other Semiconductor Application Symposium (GAAS 2000)
Type
conference paper
Authors
Publication date
2000
Published in
Proc.of the Gallium Arsenide and other Semiconductor Application Symposium (GAAS 2000)
Start page
536
End page
539
Subjects
Note
(invited)
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
June 24, 2010
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