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  4. From oxide surface to organic transistor properties: the nature and the role of oxide gate surface defects
 
research article

From oxide surface to organic transistor properties: the nature and the role of oxide gate surface defects

Suárez, S.
•
Fleischli, F. D.
•
Schaer, M.  
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2010
Journal of Physical Chemistry C

By applying various surface treatments to the oxide gate of pentacene transistors, both in vacuum (H2, O2 and Ar plasma treatments) and in aqueous solution, we were able to vary the balance between oxygen-free radicals (Si•), oxygen-centered radicals (Si−O• and Si−O−O•), and other defect types such as silanol (Si−OH), silicon hydride (Si−H), and silicate groups (Si−O−). The consequences of these modifications on the microstructure of pentacene deposited onto the gate have been studied by contact angle measurements and atomic force microscopy. The changes in the transport properties of the ultrathin devices were deduced from their electrical characteristics and from independent four-probe measurements. While the wetting properties of the oxide and in turn the pentacene growth process is mainly controlled by the Si−OH/Si−O− balance, it has been evidenced that oxygen-centered radicals act as charge transfer centers and determine to a large extent the transport properties of many thin-film transistors.

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Type
research article
DOI
10.1021/jp911167h
Web of Science ID

WOS:000276562500038

Author(s)
Suárez, S.
Fleischli, F. D.
Schaer, M.  
Zuppiroli, L.  
Date Issued

2010

Publisher

American Chemical Society

Published in
Journal of Physical Chemistry C
Volume

114

Issue

15

Article Number

7153

Subjects

Thin-Film Transistors

•

Field-Effect Transistors

•

Self-Assembled Monolayers

•

Zero Charge

•

Threshold Voltage

•

Effect Mobility

•

Dipole-Moment

•

Pentacene

•

Performance

•

Semiconductors

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LOMM  
Available on Infoscience
May 6, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/49968
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