Mott phase at the surface of 1T-TaSe2 observed by scanning tunneling microscopy

In this Letter we report the observation, by scanning tunneling microscopy, of a Mott metal to insulator transition at the surface of 1T-TaSe2. Our spectroscopic data compare considerably well with previous angle-resolved photoemission spectroscopy measurements and confirm the presence of a large hysteresis related to a first order process. The local character of the tunneling spectroscopy technique allows a direct visualization of the surface symmetry and provides spectroscopic measurements on the defect-free region of the sample. It follows that the electronic localization is driven purely by the enhancement of the charge density wave amplitude which drives a bandwidth controlled metal-insulator transition.


Published in:
Physical Review Letters, 94, 036405
Year:
2005
Publisher:
American Physical Society
ISSN:
0031-9007
Keywords:
Laboratories:




 Record created 2010-04-07, last modified 2018-03-17


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