TEM characterization of textured silicon heterojunction solar cells

The usefulness of Transmission Electron Microscopy (TEM) for the fabrication of high-performance textured amorphous/crystalline silicon (a-Si:H/c-Si) heterojunction (HJ) solar cells is demonstrated. The classical characterization techniques used to monitor the a-Si:H layers properties incorporated into flat HJ solar cells with high open-circuit voltages up to VOC=710 mV and electrical conversion efficiencies up to 􀀂=19.1% are partly inapplicable on textured c-Si. In this situation, TEM is a powerful tool for the identification of key microstructural features of the a-Si:H/c-Si interface needed for achieving high- VOC HJ solar cells with VOC over 700 mV.


  • There is no available fulltext. Please contact the lab or the authors.

Related material