TEM characterization of textured silicon heterojunction solar cells

The usefulness of Transmission Electron Microscopy (TEM) for the fabrication of high-performance textured amorphous/crystalline silicon (a-Si:H/c-Si) heterojunction (HJ) solar cells is demonstrated. The classical characterization techniques used to monitor the a-Si:H layers properties incorporated into flat HJ solar cells with high open-circuit voltages up to VOC=710 mV and electrical conversion efficiencies up to 􀀂=19.1% are partly inapplicable on textured c-Si. In this situation, TEM is a powerful tool for the identification of key microstructural features of the a-Si:H/c-Si interface needed for achieving high- VOC HJ solar cells with VOC over 700 mV.


Presented at:
EMC2008, Aachen, September 1-5, 2008
Year:
2008
Keywords:
Laboratories:




 Record created 2010-02-15, last modified 2018-09-13


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