We have investigated the p- and n-type dopants in thin SGOI (20 nm) material obtained by Ge enrichment. The samples are doped with either BF2 or arsenic or phosphorus and then annealed with either a spike or a 15 s rapid thermal annealing in a temperature range of 850-1050 °C. We have observed that sheet resistance (Rsh) obtained in SGOI for p-type is approximately independent of annealing conditions. In addition, these values are lower than the SOI (20 nm) reference. Result reveals that almost all BF2 atoms remain in SGOI substrate giving rise to low Rsh, whereas dopant out diffuses and segregates in SOI. In contrast, Rsh measured with arsenic and phosphorus implanted SGOI samples is higher than SOI.