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research article
Effect of sidewall passivation in BCl3/N2 inductively coupled plasma etching of two-dimensional GaAs photonic crystals
The effect of surface passivation in BCl3/N-2 inductively coupled plasma reactive-ion etching of GaAs-based photonic crystals (PhCs) was investigated. It is shown that sidewall passivation is crucial for achieving cylindrical, vertical PhC holes, where the exact shape of the hole is controlled via the N-2 content in the plasma composition. The achieved quality of PhC membrane cavities was established by optical characterization of such cavities incorporating site-controlled quantum wires as integrated light source. (C) 2009 American Vacuum Society. [DOI:10.1116/1.3205004]
Type
research article
Web of Science ID
WOS:000270447400001
Authors
Publication date
2009
Published in
Volume
27
Issue
5
Start page
L21
End page
L24
Subjects
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
November 13, 2009
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