Structural and electronic properties of oxygen vacancies in monoclinic HfO2


Published in:
Materials Research Society Symposium Proceedings, 966E, 0996-H01-08
Presented at:
Characterization of oxide/semiconductor interfaces for CMOS technologies, San Francisco, California, April 9-13, 2007
Year:
2007
Laboratories:




 Record created 2009-10-14, last modified 2018-03-17


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