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research article
First principles study of substoichiometric germanium oxides
Using density functional calculations, we studied substoichiometric Ge oxides through a series of crystalline models representing the various oxidation states. We evaluated deviations with respect to a bond-energy description in terms of penalty energies for intermediate oxidation states of Ge. Corresponding bond length variations and band gaps are also given. The calculated penalty energies are significantly lower than for Si indicating higher stability of the substoichiometric phase at Ge/GeO2 interfaces compared to Si/SiO2 interfaces. (C) 2009 Elsevier B.V. All rights reserved.
Type
research article
Web of Science ID
WOS:000267460100061
Authors
Publication date
2009
Published in
Volume
86
Issue
7-9
Start page
1760
End page
1762
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 8, 2009
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