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research article
Core-level photoelectron spectroscopy probing local strain at silicon surfaces and interfaces
Using a first-principles approach, we investigate the origin of the fine structure in Si 2p photoelectron spectra at the Si(100)2x1 surface and at the Si(100)-SiO2 interface. Calculated and measured shifts show very good agreement for both systems. By using maximally localized Wannier functions, we provide an interpretation in which the effects due to the electronegativity of second nearest neighbor atoms and due to the local strain field are distinguished. Hence, in combination with accurate modeling, photoelectron spectroscopy can provide a direct measure of the strain field at the atomic scale.
Type
research article
Web of Science ID
WOS:000246281800003
Authors
Publication date
2007
Published in
Volume
893
Start page
7
End page
8
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 8, 2009
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