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conference paper
Atomistic model of the 4H(0001)SiC-SiO2 interface: structural and electronic properties
2007
Physics of Semiconductors, Pts A and B
Through the sequential use of classical molecular dynamics and first-principles relaxation methods, we generate an abrupt model interface for the 4H(0001)SiC-SiO2 interface showing regular structural parameters without any coordination defect. The valence and conduction band offsets are calculated and found to be in fair agreement with the experimental values. Si-2p core-level shifts are calculated for this model interface and compared with available experimental data.
Type
conference paper
Web of Science ID
WOS:000246281800150
Authors
Publication date
2007
Published in
Physics of Semiconductors, Pts A and B
Series title/Series vol.
AIP Conference Proceedings; 893
Start page
307
End page
308
Peer reviewed
REVIEWED
EPFL units
Event name | Event place | Event date |
Vienna (Austria) | 24-28 July 2006 | |
Available on Infoscience
October 8, 2009
Use this identifier to reference this record