Atomistic model of the 4H(0001)SiC-SiO2 interface: structural and electronic properties

Through the sequential use of classical molecular dynamics and first-principles relaxation methods, we generate an abrupt model interface for the 4H(0001)SiC-SiO2 interface showing regular structural parameters without any coordination defect. The valence and conduction band offsets are calculated and found to be in fair agreement with the experimental values. Si-2p core-level shifts are calculated for this model interface and compared with available experimental data.


Published in:
Physics of Semiconductors, Pts A and B, 893, 307-308
Year:
2007
ISSN:
0094-243X
Laboratories:




 Record created 2009-10-08, last modified 2018-09-13


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