Migration of oxygen vacancy in HfO2 and across the HfO2/SiO2 interface: A first-principles investigation

Oxygen vacancy migration is studied in monoclinic HfO2 and across its interface with SiO2 through density functional calculations. In HfO2, long-range diffusion shows activation barriers of 2.4 and 0.7 eV for the neutral and doubly positively charged vacancy, respectively. In the latter case, the migration preferentially occurs along one-dimensional pathways. A HfO2/SiO2 interface model is constructed to address O vacancy migration across high-kappa gate stacks. The vacancy is shown to stabilize in its neutral charge state upon entering the SiO2 layer.

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Applied Physics Letters, 91, 192905
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 Record created 2009-10-08, last modified 2018-03-17

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