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  4. Abrupt model interface for the 4H(1000)SiC-SiO2 interface
 
research article

Abrupt model interface for the 4H(1000)SiC-SiO2 interface

Devynck, F.  
•
Giustino, F.
•
Pasquarello, Alfredo  
2005
Microelectronic Engineering

Through the sequential use of classical molecular dynamics and first-principles relaxation methods, we generate an abrupt model interface for the 4H(0001)SiC-SiO2 interface showing regular structural parameters without any coordination defect. The bond density reduction at the interface is achieved through the use of two interfacial structural units which connect the disordered oxide to the abrupt crystalline substrate. The present model demonstrates that the sole topological constraints at SiC substrates do not preclude the occurrence of oxides of similar quality as compared to those found on Si substrates.

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Type
research article
DOI
10.1016/j.mee.2005.04.021
Web of Science ID

WOS:000231517000010

Author(s)
Devynck, F.  
Giustino, F.
Pasquarello, Alfredo  
Date Issued

2005

Published in
Microelectronic Engineering
Volume

80

Start page

38

End page

41

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
CSEA  
Available on Infoscience
October 8, 2009
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/43478
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