Complex Pattern of Impurity States in Shallow Semiconductor Quantum-Wells

Electronic states bound to impurities located in the quantum well barriers are calculated when the bulk binding energy is comparable to the quantum well depth. We show the existence of a complex level pattern due to the interaction between barrierlike states and states which are essentially confined in the well. The effects of an electric field are also discussed.


Published in:
Europhysics Letters, 15, 4, 447-451
Year:
1991
ISSN:
0295-5075
Laboratories:




 Record created 2009-10-08, last modified 2018-03-17


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